Oral Sessions

GaN devices operating at reverse conduction region causing excessive conduction loss. Therefore, the GaN based switching converters are required to minimize the dead-time. This paper proposes a novel highly digitally adaptive dead-time control for GaN driver. A driver integrated circuit (IC) is designed in 0.18μm BCD GEN2 process to verify the concept. The simulation result achieves 0.4ns dead-time at 5A. The measurement result achieves 0.7ns deadtime at 2A and efficiency can improve 2.1% at 2A full load compared to 10ns fixed dead-time counterpart

 

In the paper, we discuss piezoelectric-vibration energy-harvesting flipping active-diode rectifiers, including the full bridge rectifier (FBR), the active diode rectifier, the switch only rectifier (SOR), and the flipping-capacitor rectifier (FCR). The energy harvesting circuits were implemented in 0.35-μm CMOS process. Compared to the transferred-power ability of the conventional FBR, the simulation improved factors of an active diode rectifier, SOR and FCR can reach up to 2x, 3.2x and 4.6x at an excitation frequency of 100 Hz, respectively.

 

This paper presents a charge pump with an embedded soil electrical conductivity (soil-EC) sensor. The sensing system harvests energy and measures the conductivity of the soil simultaneously solely using the proposed wide-range capacitive DC-DC power converter. The embedded time-domain slope detection mechanism is employed to measure conductivity and maintain high conversion efficiency. The self-sustained soil-EC monitoring IC was fabricated using 0.18-μm CMOS technology. The design achieves a tracking efficiency of 98% over an input range of 416-5000μW, a peak system conversion efficiency of 88%, and also measures the soil EC from 0.114 to 0.744 mS/cm.

 

* Abstract is not available.